PREPARATION METHOD FOR TRANSPARENT CONDUCTIVE OXIDE FILM OF CRYSTALLINE SILICON HETEROJUNCTION SOLAR CELL

摘要

Provided is a preparation method for a transparent conductive oxide film of a crystalline silicon heterojunction solar cell. The preparation method comprises the step of: depositing an indium titanium oxide ITIO film by virtue of a magnetron sputtering method by taking argon, hydrogen and oxygen as reaction gases, wherein the process parameters of the magnetron sputtering method are as follows: the deposition power density is 1.5kW/m-15kW/m, the deposition rate is 2.5nm/s-25nm/s, the carrier mobility of the obtained ITIO film is 20～100cm ²/Vs, the resistivity is 2～10*10 ^-4Ω·cm, and the transmittance is greater than 90%. The product is good in uniformity and stability and the fast deposition rate can meet the requirements of high-rate production; and the method can be used to the large-scale production of the crystalline silicon heterojunction solar cell so as to obtian the crystalline silicon heterojunction solar cell with the conversion efficiency higher than 22.5%.