PRECISION ETCHING APPARATUS FOR FABRICATING RECESSED-GATE ENHANCEMENT-MODE DEVICE, AND ETCHING METHOD FOR SAME

摘要

Disclosed are a precision etching apparatus for fabricating a recessed-gate enhancement-mode device and an etching method for the same. The apparatus provided by the present invention comprises an inductively-coupled plasma etching chamber, a current detection apparatus, an inductive coil, a radio frequency source, a mechanical pump, and a molecular pump. The current detection apparatus is connected to the inductively-coupled plasma etching chamber. The inductive coil is connected to the inductively-coupled plasma etching chamber. The radio frequency source is connected to the inductive coil. The mechanical pump and the molecular pump are connected to the inductively-coupled plasma etching chamber. When a displayed current value is zero during an HEMT device fabrication process, the apparatus shuts off a two-dimensional electron gas channel, and etching is terminated, thereby preventing gate leakage caused by over-etching or damage to the two-dimensional electron gas channel, and achieving precision etching. The present invention achieves prevision etching merely by adding and connecting one current detection apparatus without any additional operation steps, is easy to operate, and improves a product yield rate of enhancement-mode HEMT devices, thereby providing high practical value.