SiGe INTELLIGENT SEMICONDUCTOR DEVICE HAVING SiGe QUANTUM WELL

摘要

The present invention relates to an intelligent semiconductor element which is configured to form a body region, in which a channel is formed, in a heterogeneous joint of different semiconductor layers and to form a quantum well on the semiconductor layer jointed to a drain. The intelligent semiconductor element stores a positive hole in the quantum well, imitates a short-term memory, and naturally imitates, at low power, that the short-term memory is changed to a long-term memory while the positive hole is accumulatively stored in the quantum well by continuous stimulus (pulse input) and then the positive hole is stored in a charge storage layer. Moreover, the intelligent semiconductor element can be manufactured as a bulk-type semiconductor substrate, and an existing CMOS technology can be utilized.