GAN- PVD ALN OXYGEN CONTROLLED PVD ALN BUFFER FOR GAN-BASED OPTOELECTRONIC AND ELECTRONIC DEVICES

摘要

An oxygen controlled PVD AlN buffer for GaN-based optoelectronic and electronic devices is disclosed. Also disclosed is a method of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen-controlled manner. By way of example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices includes reactive sputtering an AlN layer on a substrate, where the reactive sputtering is a nitrogen-containing gas or a nitrogen-containing gas. Reacting the plasma with the aluminum-containing target contained in the physical vapor deposition (PVD) chamber. This method further includes introducing oxygen into the AlN layer.