首页> 外国专利> CIGS MANUFACTURING METHOD FOR CIGS THIN FILM TYPE ABSORBER LAYER MANUFACTURING METHOD FOR THIN FILM SOLAR CELL USING THEREOF AND THIN FILM SOLAR CELL

CIGS MANUFACTURING METHOD FOR CIGS THIN FILM TYPE ABSORBER LAYER MANUFACTURING METHOD FOR THIN FILM SOLAR CELL USING THEREOF AND THIN FILM SOLAR CELL

机译:薄膜太阳能电池的cigs制造方法及其薄膜太阳能电池的薄层型吸收层制造方法

摘要

The present invention is a method of manufacturing a light absorbing layer of a CIGS solar cell, the step of depositing a thin film layer on a substrate by simultaneously evaporating Cu, In, Ga, and Se using a single process method (where n is a natural number of 2 or more) A method of manufacturing a CIGS light absorbing layer formed of a thin film layer composed of n layers repeatedly, a method of manufacturing a thin film solar cell using the CIGS thin film type light absorbing layer prepared thereby, and a thin film solar cell manufactured thereby, according to the present invention When the CIGS light absorbing layer is manufactured through a method, a thin film layer having a bandgap gradient can be manufactured through a single process method, so that the process is simple and a thin film having a bandgap gradient can be produced even at a thin thickness.
机译:本发明是一种制造CIGS太阳能电池的光吸收层的方法,该步骤是通过使用单处理方法同时蒸发Cu,In,Ga和Se来在基板上沉积薄膜层的步骤(其中n是2以上的自然数)一种反复制造由n层构成的薄膜层构成的CIGS光吸收层的方法,使用由此制备的CIGS薄膜型光吸收层制造薄膜太阳能电池的方法,以及根据本发明,当通过一种方法制造CIGS光吸收层时,可以通过单一工艺方法制造具有带隙梯度的薄膜层,因此该工艺简单且容易。即使薄的厚度也可以制造带隙梯度小的薄膜。

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