ITO Ti ITO Ti Ti METALIZING STRUCTURE FOR SKUTTERUDITE THERMOELECTRIC MATERIALS WITH ITO INTERLAYER Ti METALIZING METHOD SKUTTERUDITE THERMOELECTRIC MATERIALS WITH Ti METALIZING AND MANUFACTURING METHOD FOR THE SAME

摘要

The present invention relates to a metallization method capable of improving the efficiency of a thermoelectric element by thinning a metal compound layer in applying a Ti metallization layer, an intermediate layer forming step of forming an ITO intermediate layer on the surface of a Ti foil; And it characterized in that it comprises a bonding step of forming a Ti metallization layer by bonding the Ti foil to the surface of the skirted tertite thermoelectric material such that the intermediate layer of ITO faces the surface of the skirted ruthetic thermoelectric material. The present invention has an effect of reducing the formation of an intermetallic compound formed by mutual diffusion of the sintering process by sintering the thermoelectric material powder after forming the ITO intermediate layer on the surface of the Ti foil. In addition, by reducing the intermetallic compound generated in the process of using for a long time at a high temperature by the ITO intermediate layer, there is an effect of increasing the economic efficiency by increasing the life of the thermoelectric element.