首页> 外国专利> METHOD FOR MODIFYING AN INITIAL STRESS STATE OF AN ACTIVE LAYER TO A FINAL STRESS STATE

METHOD FOR MODIFYING AN INITIAL STRESS STATE OF AN ACTIVE LAYER TO A FINAL STRESS STATE

机译:将活动层的初始应力状态修改为最终应力状态的方法

摘要

The method comprises the steps of: a) providing a first substrate (1) comprising an active layer (10) made of a first material having a Young's modulus E1 and a thickness h1; b) providing a second substrate 2 made of a second material of Young's modulus E2 and thickness h2; c) bending the first substrate 1 and the second substrate 2 such that each of them has a curvature radius of curvature R; d) bonding the second substrate 2 to the active layer 10 such that the second substrate 2 strictly follows the shape of the first substrate 1; And e) restoring the form of the initial stationary state of the second substrate 2; The method is that the second material of the second substrate 2 Flexible material that conforms to the thickness of the second substrate (2) And the radius of curvature is a relational It is noteworthy to comply with.
机译:该方法包括以下步骤:a)提供第一衬底(1),其包括由具有杨氏模量E1和厚度h1的第一材料制成的有源层(10); b)提供由杨氏模量E2和厚度h2的第二材料制成的第二基板2; c)弯曲第一基板1和第二基板2,使得它们各自具有曲率半径R; d)将第二基板2接合到有源层10,使得第二基板2严格遵循第一基板1的形状; e)恢复第二基板2的初始静止状态的形式;该方法是使第二基板2的第二材料与第二基板(2)的厚度相适应的柔性材料与曲率半径成关系。值得注意的是。

著录项

  • 公开/公告号KR102078697B1

    专利类型

  • 公开/公告日2020-02-19

    原文格式PDF

  • 申请/专利权人 소이텍;

    申请/专利号KR20157013556

  • 申请日2013-10-11

  • 分类号H01L21/20;

  • 国家 KR

  • 入库时间 2022-08-21 11:05:17

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