PROCESS FOR CONNECTING JOINING PARTNERS BY MEANS OF AN ISOTHERMIC SOLIDIFYING REACTION IN ORDER TO FORM AN IN-BI-AG CONNECTING LAYER AND CORRESPONDING ARRANGEMENT OF JOINING PARTNERS

摘要

The present invention relates to a method for connecting, for example, an optoelectronic semiconductor chip (e.g., a light emitting diode chip) and a printed circuit board or a metal conductor frame joints (1, 2), the method comprising: a first joint (1) And providing a second junction (2), and laminating a first layer sequence (10) comprising at least one layer (11, 15) containing or consisting of silver on the first junction, A second layer sequence comprising one or more layers 29 containing indium and bismuth on the second junction 2, or comprising a layer containing indium 23 and a layer containing bismuth 22, 24 Laminating (20) and their end faces facing the first joint (1) and the second joint (2), respectively, while applying a bonding pressure (p) at a bonding temperature of up to 120°C for a preset bonding time. Pressing the first layer sequence 10 and the second layer sequence 20 on each other, wherein the first layer sequence 10 and the second layer sequence 20 are melted so that one connecting layer ( 30), and this connecting layer is in direct contact with the first and second joints, and the melting temperature of the connecting layer is 260° C. or higher.