ASYNCHRONOUS READING CIRCUIT USING DELAY SCAN IN MAGNETORESISTIVE DIRECT ACCESS MEMORY (MRAM)

摘要

Some embodiments of the present disclosure relate to a memory device. The memory device includes an active current path that includes a magnetic tunnel junction (MTJ); and a reference current path that includes a reference resistance element. The reference resistance element has a resistance that differs from a resistance of the MTJ. An asynchronous delay sensing element has a first input coupled to the active current path and a second input coupled to the reference current path. The asynchronous delay sensing element is configured to sense a time delay between a first rising or falling edge voltage on the active current path and a second rising or falling edge voltage on the reference current path. The asynchronous delay sensing element is further configured to determine a data state based on the time delay that is stored in the MTJ.