INTEGRATION OF SI-BASED TRANSISTORS WITH NON-SITE TECHNOLOGIES THROUGH SEMI-CONDUCTOR NEW GROWTH OVER AN INSULATOR MATERIAL

摘要

Disclosed herein are IC structures, packages, and devices that include a Si-based semiconductor material stack that is monolithically integrated on the same support structure as non-Si transistors or other non-Si-based devices. In some aspects, the Si-based semiconductor material stack can be provided by semiconductor regrowth over an insulator material. Providing a Si-based semiconductor material stack that is monolithically integrated on the same support structure as non-Si-based components can provide a sustainable approach for integrating Si-based transistors with non-Si technologies, as the Si-based semiconductor material stack can serve as a basis for forming Si-based transistors.