The invention relates to a programming method (200) of a nonvolatile resistance memory including a plurality of nonvolatile resistance memory units. Each storage unit can switch reversibly between the following: a low resistance state, wherein the resistance value (R) of the storage unit is less than the first resistance threshold ("thopt");And - high resistance state, wherein the resistance value (R) of the memory unit is greater than the first resistance threshold ("thopt");The programming method (200) includes a step (230) of periodically determining a first resistance threshold ("thopt") during the lifetime of the resistance memory.
展开▼
