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薄膜晶体管及其制作方法、阵列基板及其制作方法和显示装置

机译:薄膜晶体管及其制作方法、阵列基板及其制作方法和显示装置

摘要

Provided are a thin film transistor and a manufacturing method therefor, an array substrate and a manufacturing method therefor, and a display apparatus. The thin film transistor is positioned on a base substrate, and the thin film transistor comprises: an active layer comprising a first surface and a second surface arranged opposite to one another, the second surface being closer to the base substrate than the first surface; and a source and drain electrode layer comprising a source electrode and a drain electrode separated from one another, the source electrode and the drain electrode respectively being connected to the active layer, the first surface and the second surface both being non-planarised surfaces, and each non-planarised surface comprising a plurality of recesses and a plurality of protrusions arranged alternately. The active layer with non-planarised surfaces has a greater heat dissipation area, and can effectively avoid the reduction of electron mobility and weakening of driving force caused by thermally induced change, avoid the positive shift of a photo-induced self-heating stress curve, and ensure the performance stability of the thin film transistor.
机译:本发明提供一种薄膜晶体管及其制造方法,阵列基板及其制造方法以及显示装置。所述薄膜晶体管位于基底基板上,所述薄膜晶体管包括:有源层,所述有源层包括彼此相对布置的第一表面和第二表面,所述第二表面比所述第一表面更靠近所述基底基板;源极和漏极电极层包括彼此分离的源极电极和漏极电极,源极电极和漏极电极分别连接至有源层,第一表面和第二表面均为非平坦表面,并且每个非平坦表面包括交替布置的多个凹部和多个突起。具有非平面表面的活性层具有较大的散热面积,可以有效避免由于热致变化引起的电子迁移率的降低和驱动力的减弱,避免了光致自热应力曲线的正向偏移,并确保薄膜晶体管的性能稳定性。

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