HERSTELLUNGSVERFAHREN EINES HALBLEITERSUBSTRATS, DAS EINEN UNTER SPANNUNG STEHENDEN HALBLEITERABSCHNITT UMFASST

摘要

Method for producing a semiconductor substrate (100), comprising the implementation of the following steps: - producing a surface layer (106) disposed on a buried dielectric layer (104) and comprising a region (110) of constrained semiconductor; - production of an etching mask (114) on the surface layer, covering part of the region of constrained semiconductor; - etching of the surface layer according to a pattern of the etching mask, revealing at least a first lateral edge (118) formed by a first portion (120) of constrained semiconductor belonging to said part of the region of constrained semiconductor and which is in contact with the buried dielectric layer; - modification of the first portion of constrained semiconductor in a second portion of material forming a mechanical support element disposed against the region of constrained semiconductor; - removal of the etching mask.