HERSTELLUNGSMETHODE VON KOPPELUNGEN VON CMOS-TRANSISTOREN VOM TYP FIN-FET BEI NIEDRIGER TEMPERATUR

摘要

Production of a device provided with FinFET transistors comprising the steps consisting in: a) making amorphous and doping a first portion (31) of a semiconductor fin (24) by means of an inclined beam directed towards a first lateral face (24a) of the fin, while retaining a first crystalline semiconductor block (33) against a second lateral face of the fin (24b), thenb) performing at least one recrystallization annealing of said first portion, puisc) making a second portion of the fin (24) amorphous and doping it by means of an inclined beam directed towards the second lateral face (24b) of the fin, while retaining a second crystalline semiconductor block against said first lateral face (24a) of the fin, thend) perform at least annealing recrystallization of the second portion (35).