Modelling of nano nMOSFETs with alternative channel materials in the fully and quasi ballistic regimes

摘要

MOSFET scaling, building block of integrated circuits, do not allow to improve significantly the device performance anymore. One presently studied solution consists in substituting silicon for high mobility semiconductors (Ge or III-Vs) as channel material.Based on original analytical models, calibrated on advanced simulations (quantum, Monte Carlo), this thesis demonstrate that at nanometric scale, the performances expected from this new technologies are in fact lower than the one of conventional silicon devices. Quantum effects (confinement, tunnelling leakage) have been indeed found to be more penalizing in the case of alternative channel material transistors.