[[abstract]]Etching of phase-change memory thin films is essential in the -processing for the manufacture of devices. The Ge2Sb2Te5 thin film as a typical material for such purposes can be control-etched by an aqueous solution of 20% nitric acids (HNO3). It was found that the Ge2Sb2Te5 films in amorphous state could be etched more uniformly than that in crystalline state. The etch rate can be well controlled to be 4.6 nm/s using such a solution, resulting in macroscopic and microscopic uniformity on amorphous films. It is therefore suggested that the crystallization annealing of Ge2Sb2Te5 thin films should be done after a wet etching process in the manufacture of phase-change random access memories.
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机译:[[摘要]]相变存储薄膜的蚀刻在器件制造过程中至关重要。为此目的的典型材料Ge2Sb2Te5薄膜可以通过20%硝酸(HNO3)的水溶液进行控制蚀刻。发现非晶态的Ge 2 Sb 2 Te 5膜比结晶态的Ge 2 Sb 2 Te 5膜可被更均匀地蚀刻。使用这种溶液可以将蚀刻速率很好地控制为4.6 nm / s,从而在非晶膜上产生宏观和微观上的均匀性。因此建议在相变随机存取存储器的制造中,在湿法刻蚀工艺之后进行Ge2Sb2Te5薄膜的结晶退火。
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