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Analog performance at room and low temperature of triple-gate devices: Bulk, DTMOS, BOI and SOI

机译：三栅极器件在室温和低温下的模拟性能：Bulk，DTmOs，BOI和sOI

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M. G. C. Andradea; J. A. Martinoa; E. Simoenb; C. Claeysb;
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年度 2016
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1. Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation [J] . Maria Gloria Cano de Andrade, Joao Antonio Martino, Marc Aoulaiche, Microelectronics & Reliability . 2014,第11期

机译：60 MeV质子辐照下的体和DTMOS三栅极器件的研究
2. Behavior of triple-gate Bulk FinFETs with and without DTMOS operation [J] . Maria Gloria Cano de Andrade, Joao Antonio Martino, Marc Aoulaiche, Solid-State Electronics . 2012,第期

机译：具有和不具有DTMOS操作的三栅极大容量FinFET的行为
3. Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation [J] . C C M Bordallo, F F Teixeira, M A G Silveira, Semiconductor science and technology . 2014,第12期

机译：标准和单轴应变三栅极SOI FinFET在X射线辐射下的模拟性能
4. Analog performance at room and low temperature of triple-gate devices: Bulk, DTMOS, BOI and SOI [C] . M. G. C. Andrade, J. A. Martino, E. Simoen, Symposium on microelectronics technology and devices . 2012

机译：三栅极器件在室温和低温下的模拟性能：批量，DTMOS，BOI和SOI
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Analog performance at room and low temperature of triple-gate devices: Bulk, DTMOS, BOI and SOI

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