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A New Temperature Noise Model of HFET with Special Emphasis on a Gate-Leakage Current and Investigation of the Bias Dependence of the Equivalent Noise Sources

机译：一种新的HFET温度噪声模型，特别强调栅极漏电流，并研究等效噪声源的偏置依赖性

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Reuter St; R. Reuter; St. Van Waasen; D. Peters; U. Auer; W. Brockerhoff; F. J. Tegude;
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年度 2007
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1. A new noise model of HFET with special emphasis on gate-leakage [J] . Reuter R., van Waasen S. IEEE Electron Device Letters . 1995,第2期

机译：一种新的HFET噪声模型，其重点是栅极泄漏
2. Design of gate bias circuit for compensation of temperature dependence and process variation of low noise amplifier using temperature and bias dependent small signal FET model [J] . Koji Yamanaka, Kazuhisa Yamauchi, Kazutomi Mori, 電子情報通信学会技術研究報告. 集積回路. Integrated Circuits and Devices . 2001,第556期

机译：利用温度和偏置相关的小信号FET模型设计用于补偿温度依赖性和低噪声放大器的工艺变化的栅极偏置电路
3. Design of gate bias circuit for compensation of temperature dependence and process variation of low noise amplifier using temperature and bias dependent small signal FET model [J] . Koji Yamanaka, Kazuhisa Yamauchi, Kazutomi Mori, 電子情報通信学会技術研究報告. 電子デバイス. Electron Devices . 2001,第550期

机译：利用温度和偏置相关的小信号FET模型设计用于补偿温度依赖性和低噪声放大器的工艺变化的栅极偏置电路
4. A new temperature noise model of HFET with special emphasis on a gateleakage current and investigation of the bias dependence of the equivalent noise sources [C] . R Reuter, St van Waasen, D Peters, 25th European Microwave Conference Vol. One: Invited 1 to C5.5 Bologna, Italy 4-7 September 95 . 1995

机译：HFET的一种新的温度噪声模型，其重点是栅极漏电流和等效噪声源的偏置依赖性研究
5. Modeling the Effect of Propagating Acoustic Noise over a Smooth-random Surface by Using the Equivalent Source Method and the Finite Element Method [D] . Ocansey, Daniel Teye. 2018

机译：通过使用等效源法和有限元方法建模在平滑随机表面上传播声噪声的效果
6. Models of protein production along the cell cycle: An investigation of possible sources of noise [O] . Renaud Dessalles, Vincent Fromion, Philippe Robert 2020

机译：沿细胞周期的蛋白质生产模型：对可能的噪声源的调查
7. A New Temperature Noise Model of HFET with Special Emphasis on a Gate-Leakage Current and Investigation of Bias Dependence of the Equivalent Noise Sources [O] . Reuter R., van Waasen Stefan, Peters D., 1995

机译：一种特别强调栅极漏电流的HFET温度噪声新模型及等效噪声源的偏置相关性研究

A New Temperature Noise Model of HFET with Special Emphasis on a Gate-Leakage Current and Investigation of the Bias Dependence of the Equivalent Noise Sources

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