Fabrication of AI203 and AIN thin films by reactive sputtering and its optimization using DOE

摘要

Thin films of Al2O3 and AlN have been fabricated by reactive sputtering using magnetron sputtering equipment. A mixture of Ar and O2 has been used for the fabrication of Al2O3 films, and a mixture of Ar and N2 has been used for the fabrication of AlN films. Optimization of the fabrication process has been carried out using DOE (design of experiments). Experiments of the type 23 have been used for creating mathematical models of sputtering processes. The results calculated from the models have been compared with the results obtained during the fabrication process. It has been found that there is very good coincidence between the results calculated from the mathematical model and measured on fabricated layers.