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High temperature annealing effect on structure, optical property and laser-induced damage threshold of Ta2O5 films

机译:高温退火对Ta 2 O 5 薄膜的结构,光学性能和激光损伤阈值的影响

摘要

Ta2O5 films were deposited by conventional electron beam evaporation method and then annealed in air at different temperature from 873 to 1273 K. It was found that the film structure changed from amorphous phase to hexagonal phase when annealed at 1073 K, then transformed to orthorhombic phase after annealed at 1273 K. The transmittance was improved after annealed at 873 K, and it decreased as the annealing temperature increased further. The total integrated scattering (TIS) tests and AFM results showed that both scattering and root mean square (RMS) roughness of films increased with the annealing temperature increasing. X-ray photoelectron spectroscopy (XPS) analysis showed that the film obtained better stoichiometry and the O/Ta ratio increased to 2.50 after annealing. It was found that the laser-induced damage threshold (LIDT) increased to the maximum when annealed at 873 K, while it decreased when the annealing temperature increased further. Detailed damaged models dominated by different parameters during annealing were discussed. (C) 2008 Elsevier B. V. All rights reserved.
机译:通过常规电子束蒸发法沉积Ta2O5薄膜,然后在空气中于873至1273 K的不同温度下进行退火。发现在1073 K的退火条件下,薄膜结构从非晶相变为六方相,然后在转变后变为正交相在1273 K下退火。透射率在873 K下退火后有所改善,并且随着退火温度的进一步升高而降低。总积分散射(TIS)测试和原子力显微镜(AFM)结果表明,薄膜的散射和均方根(RMS)粗糙度均随着退火温度的升高而增加。 X射线光电子能谱(XPS)分析表明,该膜获得了更好的化学计量,并且退火后O / Ta比增加到2.50。发现在873 K退火时,激光损伤阈值(LIDT)增加到最大值,而在退火温度进一步升高时,激光损伤阈值(LIDT)减小。讨论了在退火过程中受不同参数支配的详细损坏模型。 (C)2008 Elsevier B. V.保留所有权利。

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