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Growth and relaxation studies of strained epitaxial layers in the InGaAs/GaAs system

机译：InGaAs / GaAs系统中应变外延层的生长和弛豫研究

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Nijenhuis J. te;
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年度 1993
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专利

1. Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-off [J] . Polentier I., Buydens L. Electronics Letters . 1990,第13期

机译：利用外延剥离将InGaAs / GaAs / AlGaAs应变层SQW LED和GaAs MESFET进行单片集成
2. High-power highly reliable 1.06 /spl mu/m InGaAs strained-quantum-well laser diodes by low-temperature growth of InGaAs well layers [MOVPE] [J] . Yuda M., Temmyo J., Sasaki T., Electronics Letters . 2003,第8期

机译：通过InGaAs阱层的低温生长获得高功率，高可靠性的1.06 / splμm/ m InGaAs应变量子阱激光二极管[MOVPE]
3. Elastic stress relaxation in buffer layers based on porous strained InGaAs/GaAs superlattices [J] . L. K. Orlov, N. L. Ivina, Yu. N. Drozdov, Technical physics letters: Letters to the Russian journal of applied physics . 2002,第12期

机译：基于多孔应变InGaAs / GaAs超晶格的缓冲层中的弹性应力松弛
4. High-power highly reliable 1.06 /spl mu/m InGaAs strained-quantum-well laser diodes by low-temperature growth of InGaAs well layers MOVPE [C] . Yuda, M., Temmyo, . 2003

机译：InGaAs阱层的低温生长获得的高功率，高可靠性的1.06 / splμm/ m InGaAs应变量子阱激光二极管MOVPE
5. Defect Creation in InGaAs/GaAs Multiple Quantum Wells: Correlation of Crystalline and Optical Properties with Epitaxial Growth Conditions. [D] . Karow, Matthias. 2014

机译：InGaAs / GaAs多量子阱中的缺陷产生：晶体和光学特性与外延生长条件的相关性。
6. In Situ SiO2 Passivation of Epitaxial (100)and (110)InGaAs by Exploiting TaSiOx Atomic Layer Deposition Process [O] . Mantu K. Hudait, *, Michael B. Clavel, 2018

机译：外延原位SiO2钝化（100）利用TaSiOx原子层沉积工艺制备和（110）InGaAs
7. Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers [O] . Roura Grabulosa Pere, Vilà i Arbonès Anna Maria, Bosch Estrada José, 2012

机译：InGaAs / GaAs外延层中应力松弛引起的原子扩散
8. Role of GaAs Bonding Layers in Improving OMVPE Growth and Performance of Strained-Layer InGaAs/AlGaAs Quantum-Well Diode Lasers [R] . Wang, C. A., Choi, H. K. 1991

机译：Gaas键合层在提高应变层InGaas / alGaas量子阱二极管激光器OmVpE生长和性能中的作用

Growth and relaxation studies of strained epitaxial layers in the InGaAs/GaAs system

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