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High Critical Current Density in the High-T c Superconductor: Generation of Efficient Pinning Centers (SOLID STATE CHEMISTRY-Multicomponent Materials)

机译:高T c超导体中的高临界电流密度:有效钉扎中心的产生(固态化学多组分材料)

摘要

We have found novel flux pinning centers in high-Tc oxide superconductor Bi2Sr2CaCu2O8 with Tc = 80 K that dramatically increase the critical current density (Jc). Single crystals with a large amount of Pb substituting for Bi were grown by the floating zone method, and their magnetic properties and microstructures have been studied by means of SQUID magnetometory and electron microscopy. Jc increases remarkably beyond a critical Pb content of ~0.4 per formula unit, where characteristic two-phase microstructures are revealed by high-resolution electron microscopy: The “single” crystals consist of alternating thin (several tens of nanometers) lamellar plates of two phases with the (010) interface; one with lower Pb content (~0.4) and a modulated structure and the other with higher Pb content (~0.6) and a modulation-free structure.
机译:我们在Tc = 80 K的高Tc氧化物超导体Bi2Sr2CaCu2O8中发现了新颖的磁通钉扎中心,该中心显着增加了临界电流密度(Jc)。用浮区法生长了大量的Pb替代Bi的单晶,并通过SQUID磁法和电子显微镜研究了它们的磁性和微观结构。 Jc显着增加,超过了每配方单位约0.4的临界Pb含量,高分辨率电子显微镜显示了特征性的两相微结构:“单”晶体由两相交替的薄(几十纳米)薄层板组成具有(010)接口;一种具有较低的Pb含量(〜0.4)和调制结构,另一种具有较高的Pb含量(〜0.6)和无调制结构。

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