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UV laser-induced high resolution cleaving of Si wafers for micro-nano devices and polymeric waveguide characterization

机译:紫外激光诱导的用于微纳米器件的硅晶片的高分辨率切割和聚合物波导表征

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摘要

In this work we propose a method for cleaving silicon-based photonic chips by using a laser based micromachining system, consisting of a ND:YVO4laser emitting at 355 nm in nanosecond pulse regime and a micropositioning system. The laser makes grooved marks placed at the desired locations and directions where cleaves have to be initiated, and after several processing steps, a crack appears and propagate along the crystallographic planes of the silicon wafer. This allows cleavage of the chips automatically and with high positioning accuracy, and provides polished vertical facets with better quality than the obtained with other cleaving process, which eases the optical characterization of photonic devices.ududThis method has been found to be particularly useful when cleaving small-sized chips, where manual cleaving is hard to perform; and also for polymeric waveguides, whose facets get damaged or even destroyed with polishing or manual cleaving processing. Influence of length of the grooved line and speed of processing is studied for a variety of silicon chips. An application for cleaving and characterizing sol–gel waveguides is presented. The total amount of light coupled is higher than when using any other procedure.
机译:在这项工作中,我们提出了一种使用基于激光的微加工系统切割硅基光子芯片的方法,该系统由以纳秒脉冲方式发射355 nm的ND:YVO4激光和微定位系统组成。激光在需要进行切割的所需位置和方向上放置凹槽标记,经过几个加工步骤后,出现裂纹并沿着硅晶片的晶体平面传播。与其他切割工艺相比,这可以自动切割芯片并具有较高的定位精度,并且可以提供抛光后的垂直小平面,其质量更高,从而简化了光子器件的光学特性。 ud ud发现这种方法特别有用切割小尺寸切屑时,难以手动切割;也适用于聚合物波导,其端面会因抛光或手动切割工艺而损坏甚至损坏。研究了各种硅芯片的刻线长度和加工速度的影响。提出了一种裂解和表征溶胶-凝胶波导的应用。耦合的总光量高于使用任何其他过程时的光量。

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