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Quantum Well and Quantum Dot broadband Optical Devices for Optical Coherence Tomography Applications

机译:用于光学相干层析成像应用的量子阱和量子点宽带光学器件

摘要

In this thesis quantum well (QW) and quantum dot (QD) based devices are investigated with the aim of obtaining broad bandwidth light sources for optical coherence tomography (OCT) applications. QD based structures have many possible advantages for broadband applications due to their inhomogeneous broadening. However, more investigation is required in order to fulfill this potential. udFirstly, in chapter one, an introduction to the fundamental principles of semiconductor heterostructures is provided followed by basic concepts of OCT. The experimental techniques used in this thesis are outlined and briefly discussed. Brief reviews of the gain measurement techniques which have been used throughout this thesis are presented.udFree carrier effects have been highlighted as a source of line-width broadening in QD structures. However, to date the effects of free carriers have mostly been experimentally determined at comparatively high carrier densities. In chapter 2 I develop a model for the gain and spontaneous emission spectra of QD active elements and show that not only are free carrier effects important at high QD occupancies, but also at much lower carrier densities where QD lasers would normally operate. Furthermore, it is shown that the choice of carrier distribution function is far less important than was previously thought in describing the experimentally observed gain and spontaneous emission spectra.udThe literature has suggested that incorporating QW layers in hybrid QW/QD structures changes the behaviour of the QDs. Optical pumping of the QD active element by emission from the QW active element is investigated experimentally in chapter 3. Analysis of a QD laser, a hybrid QW/QD super luminescence diode (SLD) and mesa diodes with different active element designs show that emission from the quantum well layer does indeed modify the QD spontaneous emission, suggesting optical pumping of the QD states and the prospect for enhanced gain from the QD ground-state.udFinally in chapter 4, different configurations of swept light sources (SLSs) are implemented with the aim of obtaining broader spectral bandwidth. It is demonstrated that increasing the gain of the QD-SOA is important in enhancing the sweep range. The use of complimentary SOAs is then explored. InP QW-SOAs and GaAs based QD-SOAs have overlapping gain and SE spectra which is utilised in a swept source laser (SSL) and filtered ASE configuration SLS. The results suggest that such sources may be able to achieve ~220nm sweep bandwidths. udChapter 5 summarizes the whole thesis and provides an overview of future work. ud
机译:本文旨在研究基于量子阱(QW)和量子点(QD)的器件,以期获得用于光学相干层析成像(OCT)应用的宽带光源。基于QD的结构由于不均匀地扩展而在宽带应用中具有许多可能的优势。但是,需要更多的调查才能发挥这种潜力。 ud首先,在第一章中,首先介绍了半导体异质结构的基本原理,然后介绍了OCT的基本概念。概述并简要讨论了本文使用的实验技术。本文对整个论文中使用的增益测量技术进行了简要回顾。 ud自由载流子效应已被强调为QD结构中线宽加宽的来源。然而,迄今为止,大多数实验是在较高的载流子密度下通过实验确定了自由载流子的作用。在第2章中,我为QD有源元件的增益和自发发射光谱建立了模型,并表明不仅在高QD占用率下自由载流子效应很重要,而且在QD激光器正常工作的低载流子密度下也很重要。此外,表明载流子分布函数的选择远不如先前在描述​​实验观察到的增益和自发发射光谱时所考虑的重要。 QD。在第3章中,通过实验研究了QW有源元件发出的光对QD有源元件的抽运。对QD激光器,QW / QD混合型超发光二极管(SLD)和具有不同有源元件设计的台面二极管的分析表明,来自QW有源元件的发射量子阱层的确确实改变了QD的自发发射,暗示了QD态的光泵浦以及从QD基态获得增强增益的前景。 ud最后,在第4章中,采用了不同的扫频光源(SLS)配置目的是获得更宽的频谱带宽。事实证明,增加QD-SOA的增益对于扩大扫描范围很重要。然后探讨免费SOA的使用。基于InP QW-SOA和基于GaAs的QD-SOA具有重叠的增益和SE光谱,可用于扫频源激光器(SSL)和经过滤波的ASE配置SLS。结果表明,此类光源可能能够实现约220nm的扫描带宽。 ud第5章总结了整个论文,并对未来的工作进行了概述。 ud

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    Peyvast Negin;

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  • 年度 2016
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