首页> 外文OA文献 >Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors

【2h】

Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors

机译：Al2O3 / AlGaN / GaN双异质结高电子迁移率晶体管中的极化诱导的远程界面电荷散射

页面导航

著录项
相似文献
相关主题

著录项

作者
Ji D; Liu B; Lu YW; Liu GP; Zhu QS; Wang ZG;
展开▼
作者单位

展开▼
年度 2012
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors [J] . Ji Dong Applied Physics Letters . 2012,第13期

机译：Al2O3 / AlGaN / GaN双异质结高电子迁移率晶体管中的极化诱导的远程界面电荷散射
2. Polarization-induced remote interfacial charge scattering in Al_2O_3/AIGaN/GaN double heterojunction high electron mobility transistors [J] . Dong Ji, Bing Liu, Yanwu Lu, Applied Physics Letters . 2012,第13期

机译：Al_2O_3 / AIGaN / GaN双异质结高电子迁移率晶体管中的极化诱导的远程界面电荷散射
3. Analysis of Interface Scattering in AlGaN/GaN/InGaN/GaN Double-Heterojunction High-Electron-Mobility Transistors [J] . LIN WANG, WEIDA HU, XIAOSHUANG CHEN, Journal of Electronic Materials . 2012,第8期

机译：AlGaN / GaN / InGaN / GaN双异质结高电子迁移率晶体管中的界面散射分析
4. A novel AlGaN/GaN/AlGaN double-heterojunction high electron mobility transistor for performance improvement [C] . Rajabi Saba, Orouji Ali A., Moghadam Hamid Amini, 2011 International Conference on Signal Processing, Communication, Computing and Networking Technologies . 2011

机译：新型AlGaN / GaN / AlGaN双异质结高电子迁移率晶体管可提高性能
5. The Effects of Thermal, Strain, and Neutron Irradiation on Defect Formation in AlGaN/GaN High Electron Mobility Transistors and GaN Schottky Diodes [D] . Lin, Chung-Han 2013

机译：热，应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
6. Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors [O] . Soo Cheol Kang, Hyun-Wook Jung, Sung-Jae Chang, 2020

机译：AlGaN / GaN高电子迁移率氟处理和凹槽通过氟处理和凹陷栅极充电效果
7. Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors [O] . Ji Dong, Lu Yanwu, Liu Bing, 2013

机译：Al2O3 / AlGaN / GaN双异质结高电子迁移率晶体管中的介电和势垒厚度波动散射
8. Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers. [R] . Tompkins, R. P., Nguyen, D. 2015

机译：si，GaN和alGaN / GaN高电子迁移率晶体管（HEmT）晶片的非接触迁移率，载流子密度和薄层电阻测量。

Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors

著录项

相似文献

相关主题

期刊订阅