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Thermal conductivity measurements of high and low thermal conductivity films using a scanning hot probe method in the 3ω mode and novel calibration strategies

机译:使用3ω模式的扫描热探针法和新颖的校准策略测量高和低导热率薄膜的导热率

摘要

This work discusses measurement of thermal conductivity (k) of films using a scanning hot probe method in the 3ω mode and investigates the calibration of thermal contact parameters, specifically the thermal contact resistance (RthC) and thermal exchange radius (b) using reference samples with different thermal conductivities. RthC and b were found to have constant values (with b = 2.8 ± 0.3 μm and Rthc = 44 927 ± 7820 K W−1) for samples with thermal conductivity values ranging from 0.36 W K−1 m−1 to 1.1 W K−1 m−1. An independent strategy for the calibration of contact parameters was developed and validated for samples in this range of thermal conductivity, using a reference sample with a previously measured Seebeck coefficient and thermal conductivity. The results were found to agree with the calibration performed using multiple samples of known thermal conductivity between 0.36 and 1.1 W K−1 m−1. However, for samples in the range between 16.2 W K−1 m−1 and 53.7 W K−1 m−1, calibration experiments showed the contact parameters to have considerably different values: Rthc = 40 191 ± 1532 K W−1 and b = 428 ± 24 nm. Finally, this work demonstrates that using these calibration procedures, measurements of both highly conductive and thermally insulating films on substrates can be performed, as the measured values obtained were within 1–20% (for low k) and 5–31% (for high k) of independent measurements and/or literature reports. Thermal conductivity results are presented for a SiGe film on a glass substrate, Te film on a glass substrate, polymer films (doped with Fe nano-particles and undoped) on a glass substrate, and Au film on a Si substrate. © 2015 The Royal Society of Chemistry.
机译:这项工作讨论了在3ω模式下使用扫描热探针法测量膜的导热率(k)的方法,并研究了热接触参数的校准,特别是使用参考样品和热交换电阻(RthC)和热交换半径(b)不同的热导率。对于热导率为0.36 WK-1 m-1至1.1 WK-1 m-的样品,发现RthC和b具有恒定值(b = 2.8±0.3μm,Rthc = 44927±7820 KW-1) 1。开发了一种独立的接触参数校准策略,并使用在先测得的塞贝克系数和热导率的参考样品对此热导率范围内的样品进行了验证。发现结果与使用多个已知热导率在0.36和1.1 W K-1 m-1之间的样品进行的校准一致。但是,对于介于16.2 WK-1 m-1和53.7 WK-1 m-1之间的样本,校准实验表明接触参数具有明显不同的值:Rthc = 40 191±1532 KW-1和b = 428± 24纳米最后,这项工作表明,使用这些校准程序,可以对基材上的高导电性和隔热膜进行测量,因为获得的测量值在1%至20%(对于低k)和5%至31%(对于高k)之间k)独立的测量和/或文献报告。给出了在玻璃基板上的SiGe膜,在玻璃基板上的Te​​膜,在玻璃基板上的聚合物膜(掺杂有Fe纳米粒子和未掺杂的)和在Si基板上的Au膜的热导率结果。 ©2015英国皇家化学学会。

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