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In-mole-fraction of InGaAs Insertion Layers Effects on the Structural and Optical Properties of GaSb Quantum Dots Grown on (001) GaAs Substrate

机译：InGaAs插入层的内部分数对（001）GaAs衬底生长的GASB量子点的结构和光学性质的影响

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Suwit Kiravittaya; Kamonchanok Khoklang; Supachok Thainoi; Somsak Panyakeow; Somchai Ratanathammaphan;
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年度 1970
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1. Controlled optical properties of GaSb/InGaAs type-ll quantum dots grown on InP substrate [J] . S. H. Zhang, L. Wang, Z. W. Shi, Applied Physics Letters . 2012,第25期

机译：在InP衬底上生长的GaSb / InGaAs II型量子点的受控光学性质
2. Structural and optical features of InGaAs quantum dots grown on Si(001) substrates [J] . Vdovin VI., Kazakov IP., Rzaev MM., Journal of Physics. Condensed Matter . 2002,第48期

机译：在Si（001）衬底上生长的InGaAs量子点的结构和光学特征
3. Capping effect of GaAsSb and InGaAsSb on the structural and optical properties of type II GaSb/GaAs quantum dots [J] . He Jun Applied Physics Letters . 2012,第17期

机译：GaAsSb和InGaAsSb的封端效应对II型GaSb / GaAs量子点的结构和光学性质的影响
4. In-mole-fraction of InGaAs insertion layers effects on the structural and optical properties of GaSb quantum dots grown on (100) GaAs substrate [C] . Khoklang Kamonchanok, Kiravittaya Suwit, Thainoi Supachok, International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology . 2015

机译：InGaAs插入层的分子内分数对（100）GaAs衬底上生长的GaSb量子点的结构和光学性质的影响
5. Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates [D] . Frateschi, Newton Cesario 1993

机译：基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
6. The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate [O] . Zhang Shuhui, Wang Lu, Shi Zhenwu, 2012

机译：在InP（100）衬底上生长的GaSb / InGaAs II型量子点的结构和光学性质
7. The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate [O] . 2012

机译：在InP（100）衬底上生长的GaSb / InGaAs II型量子点的结构和光学性质
8. Investigation of misfit dislocation configurations in MBE-grown InGaAs layers on misaligned GaAs (001) substrates [R] . Werner, P, Zakharov, N D, Chen, Y, 1992

机译：在未对准的Gaas（001）衬底上研究mBE生长的InGaas层中的错配位错构型

In-mole-fraction of InGaAs Insertion Layers Effects on the Structural and Optical Properties of GaSb Quantum Dots Grown on (001) GaAs Substrate

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