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Influence of Wafer Edge Profile on STI-CMP Process Performance : Examination Based on Surface Pressure of Wafer Calculated by FEM Analysis(Machine Elements, Design and Manufacturing)

机译：晶圆边缘轮廓对STI-CMP工艺性能的影响：基于FEM分析计算的晶片表面压力（机器元件，设计和制造）

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Akira FUKUDA; Tetsuo FUKUDA; Hirokuni HIYAMA; Manabu TSUJIMURA; Toshiro DOI; Syuhei KUROKAWA; Osamu OHNISHI;
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2. Influence of Wafer Edge Geometry on Removal Rate Profile in Chemical Mechanical Polishing: Wafer Edge Roll-Off and Notch [J] . Akira Fukuda, Tetsuo Fukuda, Akira Fukunaga, Japanese journal of applied physics . 2012,第5Issue2期

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3. Analysis of low Z elements on Si wafer surfaces with synchrotron radiation induced total reflection X-ray fluorescence at SSRL,Beamline 3-3:Comparison of droplets with spin coated wafers [J] . C.Streli, G.Pepponi, P.Wobrauschek, Spectrochimica Acta, Part B. Atomic Spectroscopy . 2003,第12期

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4. Stress sensitivity analysis on TSV structure of wafer-on-a-wafer (WOW) by the finite element method (FEM) [C] . Kitada H., Maeda N., Fujimoto K., Interconnect Technology Conference, 2009. IITC 2009 . 2009

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5. Non-invasive thermal profiling of silicon wafer surface during RTP using acoustic and signal processing techniques. [D] . Syed, Ahmed Rashid. 2000

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Influence of Wafer Edge Profile on STI-CMP Process Performance : Examination Based on Surface Pressure of Wafer Calculated by FEM Analysis(Machine Elements, Design and Manufacturing)

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