A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base

摘要

A new analytical method of extraction of a diode series resistance fromudcurrent-voltage characteristics is proposed which takes into account dependence of theudseries resistance on voltage (or current). The method supposes a presence of linearudsection in the diode current-voltage characteristic plotted in semi-logarithmic scale. Thisudmethod is applied here to experimental data for silicon diode in which series resistance isudcaused by freezing-out free current carriers into impurities at cryogenic temperatures.udCharacter of dependence of the base resistance on electric field in the base layeruddetermined in such way confirms hopping nature of silicon conduction under theseudconditions.