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Progress of ECRH by EBW in over-dense plasmas and controlling the confinement regime by ECCD with high power launching in LHD

机译:ECRH在过度等离子体中ECRH进展,并在LHD中推出高功率推出的欧洲经济委员会控制监禁制度

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摘要

In the large helical device (LHD), fundamental electron cyclotron resonance heating (ECRH) by the electron Bernstein wave (EBW) excited via the ordinary-extraordinary–EBW (O-X-B) mode conversion process was performed with high power (~1MW) launching. Profiles of increase of the electron temperature (Te) and the soft X-ray signals during the power injection suggest power absorption in the core region. Effects of the local modification of the rotational transform l/2π(=1/q) by electron cyclotron current drive (ECCD) on the formation and sustainment of the electron internal transport barrier (e-ITB) was investigated for the first time. Co ECCD raised l/2π close to 0.5 in the core region and caused the flattening of the Te profile. Additional ECRH power is required to form the e-ITB. On the contrary, counter (cntr.) ECCD separates l/2π from 0.5 in the core region and avoids the flattening of the Te profile. The e-ITB can be formed and sustained without additional ECRH. Analysis of the heat pulse transport with use of the modulation ECRH (MECH) shows the good confinement region extends to the l/2π =0.5 rational surface in the case of cntr. ECCD.
机译:在大型螺旋装置(LHD)中,通过普通 - 特殊-EBW(O-X-B)模式转换过程激发的电子伯尔尼斯坦波(ECRH)基本电子回旋谐振加热(ECRH)进行了高功率(〜1MW)发射。电气温度(TE)和软X射线信号增加的概况在电力注射期间表明核心区域的功率吸收。第一次研究了电子回旋电流驱动器(ECCD)对电子环速电流驱动(ECCD)的局部改变的影响,对电子内部传输屏障(E-ITB)的形成和维持进行了研究。 CO ECCD在核心区域凸起的L /2π接近0.5,并导致TE型材的平坦化。需要额外的ECRH电源来形成E-ITB。相反,计数器(CNTR。)ECCD将L /2π与核心区域中的0.5分离,避免TE型材的平坦化。可以在没有额外的ECRH的情况下形成和维持E-ITB。利用调制ECRH(机械)的热脉冲传输分析显示良好的限制区域在CNTR的情况下延伸到L /2π= 0.5的合理表面。 ECCD。

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