Dry Etching Process Development for Submicron and Nanometer Semiconductor Devices

摘要

The reactive ion etching of GaAs, AlGaAs and Si was investigated for submicronand nanometer scale semiconductor structure processing. Different parameters were varied and studied to achieve the desired controllability and reproducibility of fabrication process. That included the estimation of the influence of power density, pressure, gas flow rate and relative composition, as well as etching time on controllable etch rates and profiles, damage and roughness, and anisotropy and selectivity. The investigations of dry etching allowed the fabrication of GaAs and Si pillar structures with diameter less than 30 nm.