Cavity Coupling in Vertical-Cavity Semiconductor Lasers

摘要

This work explores two types of coupling in planar cavities: emitter coupling, alight-matter interaction; and mode coupling, a light-only interaction. Technological applications of coupling effects are discussed, along with novel metrology designed for devices such as VCSELs. A novel experimental technique for probing the side-emission from VCSELs is also described and is used both to probe for coupling effects and to serve as a metrological tool. Experiments designed to probe for emitter coupling in VCSELs are described and their results show that the effect of the cavity on the emitter can indeed be seen in side emission studies. The general effects of mode coupling are illustrated in a simplified experiment designed to show the strong redistribution of energy from a dipole inside an etalon, which is more pronounced than the normal etalon redistribution effects for light originating outside the cavity. This type of coupling to cavity modes is then examined in VCSEL structures and shown to be potent enough for device applications.