Physics-Based AlGaAs/GaAs HBT Model for Circuit Simulation

摘要

A comprehensive single heterojunction AlGaAs/GaAs biploar transistor (HBT) modelsuited for circuit simulation is presented. The model is based on the de Graff-Kloosterman formalism for the modelling of the bipolar transistors, but addes important heterostructure device physics as well as physical properties of III-V compound semiconductor materials such as AlGaAs and GaAs. The model shows how currents and charges depend on minority carrier concentration, which in turn are functions of the heterojunction valtages. In this way the influence of the built-in electric fields due to doping density gradients and graded layers, the bias-dependent transit times and the Early effect can be incorporated naturally. The implementation of the model in the APLAC circuit simulator is discussed.