首页> 美国政府科技报告 >FURTHER INVESTIGATION OF PHOTOELECTRIC SCHOTTKY DEVIATIONS FOR TUNGSTEN, MOLYBDENUM AND TANTALUM Photoelectric Schottky Deviations for Single Tungsten Crystals

【24h】

FURTHER INVESTIGATION OF PHOTOELECTRIC SCHOTTKY DEVIATIONS FOR TUNGSTEN, MOLYBDENUM AND TANTALUM Photoelectric Schottky Deviations for Single Tungsten Crystals

机译：对钨，钼和钽的光电肖特基偏差的进一步研究单钨晶体的光电肖特基偏差

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

Photoelectric Schottky deviations have been obtained experimentally for emission from the (111) crystallographic planes of a tungsten single crystal grown in a filamentary cathode (cylindrical geometry) of 0.004 in diameter wire.nIn particular the experimental results(1) agree better in an overall way with the original photoelectric Guth-Kullin theory and the latest thermionic theory of Cutler-ribbons, than with the Juenker photoelectric theory.

著录项

作者
D. F. Stafford; A. H. Weber;
展开▼
作者单位

展开▼
年度 1959
页码 1-42
总页数 42
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词

相似文献

外文文献
中文文献
专利

1. Work‐Function Measurements on Monolayer Films of Uranium on (100), (110), and (113) Oriented Faces of Tungsten Single Crystals by Photoelectric and Contact Potential Difference Techniques [J] . Lea Colin, Mee C. H. B. Journal of Applied Physics . 1968,第13期

机译：用光电和接触电势差技术在钨单晶（100），（110）和（113）取向面上对铀单层膜进行功函数测量
2. Atom Probe Investigation of Ruthenium Distributions around Rhenium, Molybdenum and Tungsten in a Gamma Phase of 5th-Generation Nickel-Base Single-Crystal Superalloys [J] . Tomonori Kitashima, Hiroshi Harada, De-Hai Ping, Materials transactions . 2007,第3期

机译：第五代镍基单晶高温合金γ相中R，钼和钨周围钌分布的原子探针研究
3. Electrochemical Synthesis,X-ray Single Crystal,IR Spectroscopic,and Quantum Chemical Investigation of Molybdenum and Tungsten Hexamethoxides [J] . Gulaim A.Seisenbaeva, Lars Kloo, Pia Werndrup, Inorganic Chemistry: A Research Journal that Includes Bioinorganic, Catalytic, Organometallic, Solid-State, and Synthetic Chemistry and Reaction Dynamics . 2001,第15期

机译：钼和六水合钨的电化学合成，X射线单晶，红外光谱和量子化学研究
4. Study of Titanium Tungsten Nitride and Tungsten Nitride Schottky Diodes on n-GaN [C] . C. S. Lee, E. Y. Chang, D. Biswas, European Gallium Arsenide and Other Semiconductors Application Symposium . 2002

机译：N-GaN上钨氮化钨和钨氮化钨二极管的研究
5. Studies on Schottky barrier devices prepared from well characterized tungsten diselenide crystals grown by DVT technique. [D] . Patel, Chandrakant A. 2009

机译：由通过DVT技术生长的特征明确的二硒化钨晶体制备的肖特基势垒器件的研究。
6. A Comparison of the Thermionic and Photoelectric Work Functions for Clean Tungsten [O] . A. H. Warner 1927

机译：清洁钨的热电子和光电功函数的比较
7. Transformation of polycrystalline tungsten to monocrystalline tungsten W(100) and its potential application in Schottky emitters [O] . Dokania, A.K. (author), Hendrikx, R. (author), Kruit, P. (author) 2009

机译：多晶钨向单晶钨W（100）的转变及其在肖特基发射极中的潜在应用
8. Fabrication and Deformation of Tungsten Single Crystals Part Ⅰ ＂Effect of Billet Rolling Plane and Rolling Direction on the Recrystallization Temperature of Sheet from Tungsten Single Crystals＂Part Ⅱ＂Recrystallization of Worked Single Crystals of Tungsten＂ [R] . 1963

机译：钨单晶的制备和变形Ⅰ“坯料轧制面和轧制方向对钨单晶板再结晶温度的影响”第Ⅱ部分“钨单晶再结晶”

FURTHER INVESTIGATION OF PHOTOELECTRIC SCHOTTKY DEVIATIONS FOR TUNGSTEN, MOLYBDENUM AND TANTALUM Photoelectric Schottky Deviations for Single Tungsten Crystals

摘要

著录项

相似文献

相关主题

期刊订阅