Semiconductor Measurement Technology: The Relationship between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon

摘要

New data have been obtained for the resistivity-dopant density relationship for silicon doped with phosphorus or boron for dopant densities in the range 10 to the 13th power to 10 to the 20th power/cu cm. For dopant densities less than 10 to the 18 power/cu cm, results were calculated from resistivity and junction capacitance-voltage measurements on processed wafers. For more heavily doped material, data were obtained from Hall effect and resistivity measurements on specimens cut from bulk silicon slices.