Research and Development of New Technologies for the Preparation of III/V Semiconductor Materials and on Methods for Evaluation of the Quality of These Materials - Project: GA(AS,P) Epi Layers and Substrates for Them

摘要

Methods for series production of GaAs(0.6)P(0.4) layers on gallium arsenide and germanium substrates were developed. The influence of temperature, composition of the gas phase, and substrate preparation were examined and optimized. The layers were tested by Hall effect and photoluminescence measurements, and the quantum efficiency was determined by means of zinc diffused test diodes. Epitaxial layers were also successfully tested in the production lines of a German and an American light emitting diode manufacturer. Layers of GaAs (0.65) P(0.35) deposited on gallium phosphide substrates show good crystal quality, but the quantum efficiencies need further development. Cutting and polishing of gallium arsenide and gallium phosphide wafers were developed to production basis.