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NTD Germanium: A Novel Material for Low-Temperature Bolometers

机译:NTD锗:一种用于低温测温仪的新型材料

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Six samples of ultra-pure (absolute value N/sub A/ - N/sub D/ absolute value less than or equal to 10 exp 11 cm exp -3 ), single-crystal germanium have been neutron transmutation doped with neutron doses between 7.5 x 10 exp 16 and 1.88 x 10 exp 18 cm exp -2 . After thermal annealing at 400 exp 0 C for six hours in a pure argon atmosphere, the samples have been characterized with Hall effect and resistivity measurements between 300 and 0.3 K. Our results show that the resistivity in the low temperature, hopping conduction regime can be approximated with rho = rho sub 0 exp( delta /T). The three more heavily doped samples show values for rho sub 0 and delta ranging from 430 to 3.3 omega cm and from 4.9 to 2.8 K, respectively. The excellent reproducibility of neutron transmutation doping and the values of rho sub 0 and delta make NTD Ge a prime candidate for the fabrication of low temperature, low noise bolometers. The large variation in the tabulated values of the thermal neutron cross sections for the different germanium isotopes makes it clear that accurate measurements of these cross-sections for well defined neutron energy spectra would be highly desirable. (ERA citation 07:054690)

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