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Apparatus for producing high purity silicon carbide crystals Patent

机译：生产高纯度碳化硅晶体的装置

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摘要

Device for producing high purity silicon carbide on carbon base by hydrogen reduction of silicon tetrachloride

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作者
Jewell, R. A.; Wakelyn, N. T.;
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年度 1966
页码 1-4
总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
CRYSTAL GROWTH; SILICON CARBIDES; VAPOR DEPOSITION; CARBON; SILICON TETRACHLORIDE;

机译：晶体生长;硅碳化物;蒸气沉积;碳;四氯化硅;

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专利

1. Trace elements study of high purity nanocrystalline silicon carbide (3C-SiC) using k(0)-INAA method [J] . Huseynov Elchin, Jazbec Anze Physica, B. Condensed Matter . 2017,第期

机译：用K（0）-INAA法使用k（0）的高纯度纳米晶碳化硅（3C-SiC）的微量元素研究
2. Highly sensitive thermistors based on high-purity polycrystalline cubic silicon carbide [J] . Elder A. de Vasconcelos, S.A. Khan, W.Y. Zhang Sensors and Actuators, A. Physical . 2000,第1a3期

机译：基于高纯度多晶立方碳化硅的高灵敏度热敏电阻
3. Highly sensitive thermistors based on high-purity polycrystalline cubic silicon carbide [J] . de Vasconcelos EA., Zhang WY., Uchida H., Sensors and Actuators, A. Physical . 2000,第1a3期

机译：基于高纯度多晶立方碳化硅的高灵敏度热敏电阻
4. Crystallographic orientation in bulk polycrystalline silicon carbide produced by a chemical vapor deposition (CVD) process [C] . James V. Marzik, William J. Croft Symposium on chemical processing of dielectrics, insulators and electronic ceramics . 2000

机译：通过化学气相沉积（CVD）工艺生产的块状多晶硅碳化物中的晶体取向
5. Wear behaviour and microstructural characterization of worn surfaces and wear debris of a high purity aluminum and an aluminum-silicon alloy and an aluminum-silicon/silicon carbide composite sliding against an M2 steel. [D] . Li, Xianyao. 1999

机译：高纯铝，铝硅合金和铝硅/碳化硅复合材料在M2钢上滑动的磨损表面和磨损碎屑的磨损行为和微观结构表征。
6. Exposure to Fibres Crystalline Silica Silicon Carbide and Sulphur Dioxide in the Norwegian Silicon Carbide Industry [O] . S. Føreland, E. Bye, B. Bakke, -1

机译：挪威碳化硅行业中纤维结晶二氧化硅碳化硅和二氧化硫的暴露
7. Deformation and fracture of single-crystal and sintered polycrystalline silicon carbide produced by cavitation [O] . Hattori Shuji, Okada Tsunenori, Miyoshi Kazuhisa, 1987

机译：空化产生的单晶和烧结多晶碳化硅的形变和断裂

Apparatus for producing high purity silicon carbide crystals Patent

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