Pulsed ion beam surface analysis (PIBSA) as a means of in-situ real-time analysis of thin films during growth.

摘要

Low energy (5-15 keV) pulsed ion beam surface analysis (PIBSA) comprises several different surface spectroscopies which provide a wide range of information relevant to growth of single and multi-component semiconductor, metal and metal oxide thin film and layered structures. Ion beam methods have not been widely used as an in-situ monitor of thin film growth. PIBSA has been developed as a non-destructive, in-situ, real-time probe of thin film composition and structure which does not physically interfere with deposition. Several PIBSA versions are exceptionally surface-specific, yet can yield high resolution data at ambient pressures in excess of 1 m Torr (4-5 orders of magnitude higher than conventional surface analytic methods). Therefore, PIBSA is ideal for studying ultra-thin layers and atomically abrupt interfaces. PIBSA instrumentation designed for use as an in-situ, real-time monitor of growth processes for single and multi-component thin films and layered structures is described. Representative data are shown for in-situ analysis of Pb and Zr layers at room temperature and high vacuum, as well as under conditions for growth of PZT perovskite films on MgO and RuO(sub 2) substrates.