Look at the phenomenon of charge multiplication in silicon radiation detector within the concept of dynamic focusing of the electric field

摘要

The spectra of (sup 34)S and (sup 40)Ar ions measured with silicon detectors were analyzed within the concept of dynamic focussing of the electric field. The ionization constant b was obtained for different fields. An estimate of temperature of hot electrons was obtained. A reasonable scenario for development of charge multiplication process is suggested, taking into account the influence of initial electron-hole concentration on the formation of hot carriers subsystem. 10 refs., 4 figs., 1 tab. (Atomindex citation 27:023132)