Memory and threshold switching in thin film PMMA polymer

机译：薄膜pmma聚合物中的记忆和阈值转换

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Threshold switching between two impedance states have been observed at room temperature in a polymethylmethacrylate (PMMA) thin film sandwiched between two evaporated Al-metal electrodes. The cell's I-V characteristics were found to exhibit memory property. (author). 19 refs, 4 figs. (Atomindex citation 26:058416)

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Rabah, K. V. O.;
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年度 1995
页码 1-14
总页数 14
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
PMMA; Electric Conductivity; Electrodes; Thin Film Storage Devices; Thin Films;

机译：pmma;电导率;电极;薄膜存储器件;薄膜;

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3. The reason for the increased threshold switching voltage of SiO_2 doped Ge_2Sb_2Te_5 thin films for phase change random access memory [J] . Seung Wook Ryu, Jong Ho Lee, Young Bae Ann, Applied Physicsletters . 2009,第11期

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5. An investigation of the switching threshold of multilayer thin film magneto-resistive memory elements [D] . Waite, Ruth I. 1987

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7. An investigation of the switching threshold of multilayer thin film magneto-resistive memory elements [O] . Waite, Ruth I. 1987

机译：多层薄膜磁阻存储元件的开关阈值研究

Memory and threshold switching in thin film PMMA polymer

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