Hydrogen implanted 1.3 (micro)m vertical cavity surface-emitting lasers with dielectric and wafer-boned GaAs/AlAs mirrors

摘要

A 1.3 (micro)m wavelength vertical-cavity surface-emitting laser (VCSEL) containing proton implanted isolation regions and a dielectric top mirror and a wafer-bonded GaAs/AlAs bottom mirror was fabricated. A room temperature pulsed threshold current density of 1.13 kA/cm(sup 2) and a threshold current of 2 mA have been demonstrated.