Microstructures of GaN and In(x)Ga(1-x)N Films Grown by MOCVD on Freestanding GaN Templates

摘要

We summarize structural properties of thick HVPE GaN templates from the point of view of their application as substrates for growth of nitride layers. This is followed by the results of optical and structural studies, mostly transmission electron microscopy, of nitride layers grown by MOCVD on top of the HVPE substrates.