Single-event Effect Report for EPC Series eGaN FETs: Comparison of EPC1000 and EPC2000 Series Devices for Destructive SEE.

摘要

Recent testing of the EPC1000 series eGaN FETs has shown sensitivity to Single Event Effects (SEE) that are destructive. These effects are most likely the failure of the very thin gate structure in HEMT architecture. EPC has recently changed the doping of the substrate to improve the performance and the SEE response. This testing compares the SEE response of both devices.