Recent failures in several completed Sandia Laboratories' electronic systems have traced to specific format 25 beam lead transistors and diodes. More extensive failure analysis on the devices showed them to exceed their respective specifica¬tions in electrical leakage. All of the failed devices were observed to have one thing in common:cracked silicon nitride over the beams. These observations triggered several investigations to determine if cracked silicon nitride causes electrical failures, where (processing, assembly, etc.) nitride cracking occurs, and when nitride cracking can be reduced or eliminated.nThis report describes the work done to determine the effects of changes in substrate temperature and force upon nitride cracking during bonding.
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