首页> 美国政府科技报告 >Some New Developments in the Field of High Atomic Number Semiconductor Materials
【24h】

Some New Developments in the Field of High Atomic Number Semiconductor Materials

机译:高原子序半导体材料领域的一些新进展

获取原文

摘要

A presentation of the main properties of high atomic number materials able to work as room temperature dectectors is made, including present status of synthesis. We summarize some applications, such as nuclear medical probes, tomography scanners, dosimetry and instrumentation. Mainly focused on CdTe and Hg I/sub 2/ in monocrystal form, the presentation will include some industrial applications. Hg I/sub 2/ is also presented as a photodetector associated with scintillators. (ERA citation 13:041036)

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号