MOCVD (Metal-Organic Chemical Vapor Deposition) Techniques for CdTe Solar Cells: Final Report, 15 February 1985-1 April 1987.

摘要

This report summarizes the application of metal-organic chemical vapor deposition (MOCVD) film growth to two aspects of CdTe/ITO solar cell fabrication: (1) the growth of large-area CdTe films on ITO, and (2) the formation of low-resistance ohmic contacts to p-type CdTe. A reduced-temperature MOCVD process was developed for the deposition of CdTe films in order to minimize the potential for chemical and physical changes in the ITO layer during cell fabrication of ohmic contacts (opaque and long wavelength transparent, respectively) to the CdTe layer of the photovoltaic structure. This report details the MOCVD reactor geometries and process parameters used in the development of the CdTe, HgTe, and ZnTe layer growth, as well as the results of C-V analysis of the carrier concentration in the MOCVD CdTe layers and resistance characteristics of various interfaces formed by CdTe, HgTe, and ZnTe. (ERA citation 13:039516)