Preparation, Structure and Properties of VOx and TiO2 Thin Films by MOCVD.

摘要

Titanium and vanadium oxide thin films have been prepared in a cold wall low pressure MOCVD system for the study of MOCVD processing of epitaxial oxide films. Films were deposited on Si(111) and sapphire (0001) and (1120) at temperatures from 400 to 800(degree)C. Processing parameter-structure-property relationship was examined in detail and the result is presented. 4 refs., 7 figs., 1 tab.