Creation of Interface States at the Silicon/Silicon Dioxide Interface by Uv Light Without Hole Trapping.

摘要

Photoinjection of electrons into silicon dioxide in metal-oxide-semiconductor (MOS) capacitors with 3.5 eV light is shown to create interface states with no apparent hole trapping precursor. The creation rate of these interface states depends strongly upon whether injection is from the gate metal or the silicon substrate, and on the forming gas annealing sequence used to passivate growth-induced interface states. A mechanism involving electron-induced release of hydrogen in the oxides is consistent with some aspects of the data. 10 refs., 4 figs. (ERA citation 14:024277)