Growth of epitaxical SiC layers onto on- and off-axis 6H-SiC substrates by ion beam deposition.

摘要

Thin films of (beta)-SiC have been grown epitaxically onto on-axis (0001) 6H (alpha)-SiC substrates using ion beam deposition. The ion beam deposition technique involves the direct deposition of alternating layers of (sup 13)C(sup +) and (sup 30)Si(sup +). The carbon and silicon ions were obtained from an ion implanter by decelerating mass-analyzed ion beams to 40 eV. The SiC substrate was held at (approximately)973 K. Thin films of (alpha)-SiC (a mixture of (alpha)-polytypes) were obtained following deposition onto off-axis ((approximately)2(degree)) 6H (alpha)-SiC. High resolution electron microscopy and Rutherford backscattering techniques were used to determine the structure and crystalline perfection of the resulting layers.